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Process technology for silicon carbide devices / edited by Carl-Mikael Zetterling

Contributor(s): Material type: TextTextSeries: EMIS processing series. 2 Publication details: London, United Kingdom INSPEC, IEE c2002Description: xxii, 176 p. il., tbs. 25 cmISBN:
  • 0852969988
Subject(s): LOC classification:
  • TP 261 C3 P76 2002
Contents:
Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.
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Holdings
Item type Current library Collection Call number Status Date due Barcode
Préstamo Biblioteca Pedro Arrupe Acervo TP 261 C3 P76 2002 (Browse shelf(Opens below)) Available 071584

Incluye referencias bibliográficas

Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.

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