Process technology for silicon carbide devices /
Process technology for silicon carbide devices /
edited by Carl-Mikael Zetterling
- London, United Kingdom INSPEC, IEE c2002
- xxii, 176 p. il., tbs. 25 cm.
- EMIS processing series 2 .
Incluye referencias bibliográficas
Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.
0852969988
Carburo de silicón ---Propiedades eléctricas
TP 261 C3 / P76 2002
Incluye referencias bibliográficas
Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.
0852969988
Carburo de silicón ---Propiedades eléctricas
TP 261 C3 / P76 2002