Process technology for silicon carbide devices / edited by Carl-Mikael Zetterling
Material type:
TextSeries: EMIS processing series. 2 Publication details: London, United Kingdom INSPEC, IEE c2002Description: xxii, 176 p. il., tbs. 25 cmISBN: - 0852969988
- TP 261 C3 P76 2002
Contents:
Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.
| Item type | Current library | Collection | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|---|
| Préstamo | Biblioteca Pedro Arrupe | Acervo | TP 261 C3 P76 2002 (Browse shelf(Opens below)) | Available | 071584 |
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Incluye referencias bibliográficas
Advantages of SiC -- Bulk and epitaxial growth of SiC -- Ion implantation and diffusion in SiC -- Wet and dry etching of SiC -- Thermally grown and deposited dielectrics on SiC -- Schottky and ohmic contacts to SiC -- Devices in SiC.
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