| 000 | 01253nam a2200289 u 4500 | ||
|---|---|---|---|
| 001 | CIA01000000000000000073296 | ||
| 005 | 20220227193257.0 | ||
| 008 | 060125t20022002xxkad r 000 0 eng d | ||
| 900 | _aBK | ||
| 020 | _a0852969988 | ||
| 040 |
_aUIA_P _bspa _cUIA_P |
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| 050 | 4 |
_aTP 261 C3 _bP76 2002 |
|
| 245 | 0 | 0 |
_aProcess technology for silicon carbide devices / _cedited by Carl-Mikael Zetterling |
| 260 |
_aLondon, United Kingdom _bINSPEC, IEE _cc2002 |
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| 300 |
_axxii, 176 p. _bil., tbs. _c25 cm. |
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| 440 | 0 |
_aEMIS processing series _n2 |
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| 504 | _aIncluye referencias bibliográficas | ||
| 505 | 0 |
_tAdvantages of SiC -- _tBulk and epitaxial growth of SiC -- _tIon implantation and diffusion in SiC -- _tWet and dry etching of SiC -- _tThermally grown and deposited dielectrics on SiC -- _tSchottky and ohmic contacts to SiC -- _tDevices in SiC. |
|
| 650 | 4 |
_aCarburo de silicón - _xPropiedades eléctricas |
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| 700 | 1 | _aZetterling, Carl-Mikael | |
| 710 | 2 | _aThe Institution of Electrical Engineers | |
| 903 |
_aLUCERO _b20 _c20060216 _lCIA01 _h1328 |
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| 903 |
_aJUANJOSE _b30 _c20060421 _lCIA01 _h1900 |
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| 903 |
_aJUANJOSE _b30 _c20060421 _lCIA01 _h1917 |
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